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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates: Applied Physics Letters: Vol 118, No 13
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InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots
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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates I. INTRO
Quantum dot decoherence measured by ensemble photoluminescence
Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy
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